Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates

Cheng-Yin Wang; Canek Fuentes-Hernandez; Jen-Chieh Liu; Amir Dindar; Sangmoo Choi; Jeffrey P. Youngblood; Robert J. Moon; Bernard Kippelen

doi:10.1021/am508723a

Treesearch

Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates

Formally Refereed

Authors:

Cheng-Yin Wang, Canek Fuentes-Hernandez, Jen-Chieh Liu, Amir Dindar, Sangmoo Choi, Jeffrey P. Youngblood, Robert J. Moon, Bernard Kippelen

Year:

2015

Type:

Scientific Journal

Station:

Forest Products Laboratory

DOI:

https://doi.org/10.1021/am508723a

Source:

ACS Applied Materials & Interfaces

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Abstract

We report on the performance and the characterization of top-gate organic field-effect transistors (OFETs), comprising a bilayer gate dielectric of CYTOP/ Al₂O₃ and a solution-processed semiconductor layer made of a blend of TIPS-pentacene:PTAA, fabricated on recyclable cellulose nanocrystal−glycerol (CNC/glycerol) substrates. These OFETs exhibit low operating voltage, low threshold voltage, an average field-effect mobility of 0.11 cm²/(V s), and good shelf and operational stability in ambient conditions. To improve the operational stability in ambient a passivation layer of Al₂O₃ is grown by atomic layer deposition (ALD) directly onto the CNC/glycerol substrates. This layer protects the organic semiconductor layer from moisture and other chemicals that can either permeate through or diffuse out of the substrate.

Keywords

organic field-effect transistor, top-gate geometry, cellulose, low-voltage, ambient stability

Citation

Wang, Cheng-Yin; Fuentes-Hernandez, Canek; Liu, Jen-Chieh; Dindar, Amir; Choi, Sangmoo; Youngblood, Jeffrey P.; Moon, Robert J.; Kippelen, Bernard. 2015. Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates. ACS Applied Materials & Interfaces. 7(8): 4804-4808.